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2SD2386 Datasheet

Part Number 2SD2386
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description NPN Transistor
Datasheet 2SD2386 Datasheet2SD2386 Datasheet (PDF)

2SD2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2386 Power Amplifier Applications Unit: mm · High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1557 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 140 140.

  2SD2386   2SD2386






Part Number 2SD2386
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SD2386 Datasheet2SD2386 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2386 www.datasheet4u.com DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SB1557 ·High breakdown voltage:VCEO=140V(Min) APPLICATIONS ·Power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Coll.

  2SD2386   2SD2386







NPN Transistor

2SD2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2386 Power Amplifier Applications Unit: mm · High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1557 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 140 140 5 7 0.1 70 150 −55 to 150 Equivalent Circuit Unit V V V A A W °C °C COLLECTOR BASE JEDEC ― JEITA ― TOSHIBA 2-16C1A Weight: 4.7 g (typ.) ≈ 100 Ω EMITTER 1 2003-02-04 2SD2386 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = 140 V, IE = 0 IEBO VEB = 5 V, IC = 0 V (BR) CEO IC = 50 mA, IB = 0 hFE (1) (Note) VCE = 5 V, IC = 6 A hFE (2) VCE (sat) VBE fT Cob VCE = 5 V, IC = 10 A IC = 6 A, IB = 6 mA VCE = 5 V, IC = 6 A VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz ― ― 140 5000 2000 ― ― ― ― Note: hFE (1) classification A: 5000 to 12000, B: 9000 to 18000, C: 15000 to 30000 Typ. Max Unit ― 5.0 µA ― 5.0 µA ―― V ― 30000 ―― ― 2.5 V ― 3.0 V 30 ― MHz 90 ― pF Marking TOSHIBA D2386 hFE classification (A/B.


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