2SD256

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD256 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 40V(Min) ·Collector Power Dissipation- : PC= 25W @TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4.0 A ICM Collector Current-Peak 6.0 A IB Base Current 1.0 A PC Collector Power Dissipation@TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD256 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0 40 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 2.0 V VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 4V 1.8 V ICBO Collector Cutoff Current VCB= 60V; VEB= 0 10 uA ICEO Collector Cutoff Current VCE= 40V; IB= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 uA hFE DC Current Gain IC= 1A ; VCE= 4V 40 fT Current-Gain—Bandwidth Product IC= 0.2A ; VCE= 10V 4 MHz Switching times ...