Equivalent circuit
C
Darlington
2SD2642
sElectrical Characteristics
Symbol ICBO IEBO Conditions VCB=110V VEB=5V IC=30...
Equivalent circuit
C
Darlington
2SD2642
sElectrical Characteristics
Symbol ICBO IEBO Conditions VCB=110V VEB=5V IC=30mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5mA VCE=12V, IE=–0.5A VCB=10V, f=1MHz Ratings 100max 100max 110min 5000min∗ 2.5max 3.0max 60typ 55typ V V
13.0min
B
(7 0 Ω )
E
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 110 110 5 6 1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Audio, Series Regulator and General Purpose
(Ta=25°C) Unit
External Dimensions FM20(TO220F)
4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5
µA
16.9±0.3
. V(BR)CEO
hFE VCE(sat) VBE(sat) fT COB
V
8.4±0.2
µA
MHz pF
1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2
∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
sTypical Switching Characteristics (Common Emitter)
VCC (V) 30 RL (Ω) 6 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 5 IB2 (mA) –5 ton (µs) 0.8typ tstg (µs) 6.2typ tf (µs) 1.1typ
2.54
3.9 B C E
±0.2
0.8±0.2
a b
ø3.3±0.2
Weight : Approx 2.0g a. Part No. b. Lot No.
I C – V CE Characteristics (Typical)
A 1m
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation
Voltage V C E (s a t) (V ) 3 6
I C – V BE Temperature Characteristics (Typical)
(V CE =4V)
6
5mA
5 0.
mA
0. 4m A
0.3 mA
Collector Current I C (A)
Collector Current I C (A)
5˚C 12
0.2mA
(C
as
Temp (Case
–30˚C
)
(Case Temp )
I C...