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2SD2642

Sanken Electric

Silicon NPN Transistor

Equivalent circuit C Darlington 2SD2642 sElectrical Characteristics Symbol ICBO IEBO Conditions VCB=110V VEB=5V IC=30...


Sanken Electric

2SD2642

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Equivalent circuit C Darlington 2SD2642 sElectrical Characteristics Symbol ICBO IEBO Conditions VCB=110V VEB=5V IC=30mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5mA VCE=12V, IE=–0.5A VCB=10V, f=1MHz Ratings 100max 100max 110min 5000min∗ 2.5max 3.0max 60typ 55typ V V 13.0min B (7 0 Ω ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 110 110 5 6 1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio, Series Regulator and General Purpose (Ta=25°C) Unit External Dimensions FM20(TO220F) 4.0±0.2 10.1±0.2 4.2±0.2 2.8 c0.5 µA 16.9±0.3 . V(BR)CEO hFE VCE(sat) VBE(sat) fT COB V 8.4±0.2 µA MHz pF 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.2±0.2 2.4±0.2 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC (V) 30 RL (Ω) 6 IC (A) 5 VBB1 (V) 10 VBB2 (V) –5 IB1 (mA) 5 IB2 (mA) –5 ton (µs) 0.8typ tstg (µs) 6.2typ tf (µs) 1.1typ 2.54 3.9 B C E ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. I C – V CE Characteristics (Typical) A 1m V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) 3 6 I C – V BE Temperature Characteristics (Typical) (V CE =4V) 6 5mA 5 0. mA 0. 4m A 0.3 mA Collector Current I C (A) Collector Current I C (A) 5˚C 12 0.2mA (C as Temp (Case –30˚C ) (Case Temp ) I C...




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