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2SD2693A Datasheet

Part Number 2SD2693A
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon NPN triple diffusion planar type Transistor
Datasheet 2SD2693A Datasheet2SD2693A Datasheet (PDF)

www.DataSheet4U.com Power Transistors 2SD2693A Silicon NPN triple diffusion planar type Unit: mm For power amplification ■ Features • Wide safe oeration area • Satisfactory linearity of forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw. 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 φ 3.2±0.1 1.4±0.2 1.6±0.2 0.8±0.1 2.6±0.1 ■ Absolute Maximum Ratings TC.

  2SD2693A   2SD2693A






Part Number 2SD2693
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Power Transistors
Datasheet 2SD2693A Datasheet2SD2693 Datasheet (PDF)

This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A ■ Features • Wide safe oeration area • Satisfactory linearity of forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw. 15.0±0.5 Unit: mm 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 φ 3.2±0.1 13.7±0..

  2SD2693A   2SD2693A







Silicon NPN triple diffusion planar type Transistor

www.DataSheet4U.com Power Transistors 2SD2693A Silicon NPN triple diffusion planar type Unit: mm For power amplification ■ Features • Wide safe oeration area • Satisfactory linearity of forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw. 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 φ 3.2±0.1 1.4±0.2 1.6±0.2 0.8±0.1 2.6±0.1 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current * Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 80 80 6 3 5 25 2.0 Unit V V V A A W 0.55±0.15 2.54±0.30 5.08±0.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D-A1 Package DataShee Internal Connection C B E DataSheet4U.com 150 °C −55 to +150 °C Note) *: Non-repetitive peak collector current ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) *1 Symbol VCEO ICBO ICEO IEBO hFE1 *2 hFE2 Collector-emitter saturation voltage *1 Transition frequency Turn-on time Storage time Fall time VCE(sat) fT ton tstg tf Conditions IC = 30 mA, IB = 0 VCB = 80 V, IE = 0 VCE = 80 V, IB = 0 VEB = 6 V, IC = 0 VCE = 4 V, IC = 1 A VCE = 4 V, IC = 3 A IC = 3 A, IB = 0.375 A VCE = 10 V, IC = 0.5 A, f = 10 MHz IC = 1 .


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