2SD2705S

2SD2704K / 2SD2705S Transistors For Muting (20V, 0.3A) 2SD2704K / 2SD2705S zFeatures 1) High DC current gain. hFE = 820 to 2700 2) High emitter-base voltage. VEBO = 25V (Min.) 3) Low Ron Ron= 0.7Ω (Typ.) zExternal dimensions (Unit : mm) 2SD2704K 2.9±0.2 1.9±0.2 0.95 0.95 (1) (2) 0.2 1.1+ −0.1 0.8±0.1 (3) +0.1 0.15 − 0.1 0.06 0.4 + −0.05 All terminals have same dimensions 0.2 1.6+ −0.1 2.8±0.2 0 to 0.1 0.3 to 0.6 zStructure Epitaxial planar type NPN silicon transistor ROHM : SMT3 EIAJ : SC-59 Abbreviated symbol: XL (1) Emitter (2) Base (3) Collector 2SD2705S 4±0.2 2±0.2 3±0.2 (15Min.) 0.15 0.45+ −0.05 3Min. www.DataSheet4U.com 0.4 2.5 + −0.1 5 0.5 0.15 0.45 + −0.05 (1) (2) (3) ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base ∗ Denotes h FE zAbsolute maximum ratings (Ta=25°C) Parameter Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 50 20 25 0.3 0.2 0.3 150 −55 to +150 Unit V V V A W °C °C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power 2SD2704K dissipation 2SD2705S Junction temperature Storage temperature 1/4 2SD2704K / 2SD2705S Transistors zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Output On-resistance Symbol BVCBO BVCEO BVEBO ICBO IEBO...