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2SD2908 Datasheet

Part Number 2SD2908
Manufacturers WEJ
Logo WEJ
Description NPN EPITAXIAL SILICON TRANSISTOR
Datasheet 2SD2908 Datasheet2SD2908 Datasheet (PDF)

RoHS 2SD2908 2SD2908 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 0.5 W (Tamb=25℃) .,LCollector current ICM: 5 A Collector-base voltage OV(BR)CBO: 50 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage Collector-emitter breakdown voltage OEmitter-base breakdown voltage RCollector cut-off current T.

  2SD2908   2SD2908






Part Number 2SD2908
Manufacturers GME
Logo GME
Description Transistor
Datasheet 2SD2908 Datasheet2SD2908 Datasheet (PDF)

Actions Semiconductor Co., Ltd. 5-Function Remote Controller TX2C ATS302T/RX2C ATS302R Actions Semiconductor Co., Ltd. TX2C ATS302T/RX2C ATS302R Data Sheet Version 1.02 Shenzhen Office: Tel: 86-755-82211737 Fax: 86-755-82211771 Hong Kong Office: Tel: 852-23978218 Fax: 852-23978187 Version:1. 02 -1- May 15, 2004 Free Datasheet http://www.Datasheet4U.com Actions Semiconductor Co., Ltd. 5-Function Remote Controller TX2C ATS302T/RX2C ATS302R Notice: The 5-function TX2C ATS302T/RX2C ATS302.

  2SD2908   2SD2908







Part Number 2SD2908
Manufacturers Bruckewell
Logo Bruckewell
Description Transistor
Datasheet 2SD2908 Datasheet2SD2908 Datasheet (PDF)

2SD2908 Low VCE(sat) transistor(80V,0.7A) Features • Low VCE(sat). • Excellent DC current gain characteristics. • Complements the 2SB1386 • RoHS compliant package Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [2SD2908] © Bruckewell Technology Corporation Rev. A -2014 2SD2908 Low VCE(sat) transistor(80V,0.7A) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS (Ta=25°C unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage VCEO.

  2SD2908   2SD2908







Part Number 2SD2908
Manufacturers Jiangsu Changjiang Electronics
Logo Jiangsu Changjiang Electronics
Description Transistor
Datasheet 2SD2908 Datasheet2SD2908 Datasheet (PDF)

m o .c U Plastic-Encapsulate Transistors SOT-89 4 t e e h S TRANSISTOR (NPN) SOT-89 2SD2908 a t a 1. D FEATURES . w dissipation Power 2. w 1 P : 0.5 W (Tamb=25℃) w 2 BASE COLLECTOR CM JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Collector current 5 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO Collector-base breakdown voltage Col.

  2SD2908   2SD2908







NPN EPITAXIAL SILICON TRANSISTOR

RoHS 2SD2908 2SD2908 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 0.5 W (Tamb=25℃) .,LCollector current ICM: 5 A Collector-base voltage OV(BR)CBO: 50 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage Collector-emitter breakdown voltage OEmitter-base breakdown voltage RCollector cut-off current TEmitter cut-off current CDC current gain Collector-emitter saturation voltage ETransition frequency LCollector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) fT Cob Test conditions Ic=50µA, IE=0 Ic=1mA, IB=0 IE=50µA, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 VCE=2V, IC=0.5A IC=4A, IB=100mA VCE=6V, IC=50mA, f=100MHz VCB=20V, IE=0, f=1MHz MIN TYP MAX UNIT 50 V 20 V 6V 0.5 µA 0.5 µA 120 390 1V 150 MHz 30 pF ECLASSIFICATION OF hFE(1) JRank ERange WMarking Q 120-270 AHQ R 180-390 AHR WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] .


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