2SD314

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD314 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 2.0A ·Complement to Type 2SB508 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage 60 V 60 V 5 V IC Collector Current-Continuous 3.0 A ICM Collector Current-Peak Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8.0 A 1.75 W 30 150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 4.16 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD314 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 60 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.0 V VBE(on) Base-Emitter On Voltage IC= 1A ; VCE= 2V 1.5 V ICBO Collector Cutoff Current VCB= 60V ; IE= 0 100 μA ICEO Collector Cutoff Current VCE= 60V ; IB= 0 5 mA IE...