2SD325

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD325 DESCRIPTION ·With TO-220C package ·Complement to type 2SB511 ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency www.DataSheet4U.com power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current -peak Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -50~150 Open emitter Open base Open collector CONDITIONS VALUE 35 35 5 1.5 3.0 1.75 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA; IB=0 IC=1.5A; IB=0.15A IC=1A ; VCE=5V VCB=20V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=0.1A ; VCE=2V IC=0.5A ; VCE=5V 40 35 8 MIN 35 TYP. 2SD325 SYMBOL V(BR)CEO VCEsat www.DataSheet4U.com MAX UNIT V 1.0 1.5 0.1 1.0 320 V V mA mA VBE ICBO IEBO hFE-1 hFE-2 fT MHz hFE-1 Classifications C 40-80 D 60-120 E 100-200 F 160-320 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors...