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2SD330
NPN Transistor
Description
isc Silicon NPN Power Transistor 2SD330 DESCRIPTION ·Collector-Emitter Breakdown
Voltage
- : V(BR)CEO= 50V(Min) ·Low Collector-Emitter Saturation
Voltage
- : VCE(sat)= 1.0V(Max) @IC= 2.0A ·Complement to Type 2SB514 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Especially suited for use in output stage of 10...
INCHANGE
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2SD330
NPN Transistor
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