Power Transistors. 2SD371 Datasheet

2SD371 Datasheet PDF


Part Number

2SD371

Description

Silicon NPN Power Transistors

Manufacture

INCHANGE

Total Page 2 Pages
Datasheet
Download 2SD371 Datasheet



2SD371
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SD371
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·High Power Dissipation-
: PC= 50W(Max)@TC=25
·Complement to Type 2SB531
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
90 V
80 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
IE Emitter Current-Continuous
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
Tstg Storage Temperature
6A
-6 A
50 W
150
-65~150
isc websitewww.iscsemi.cn
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2SD371
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SD371
ELECTRICAL CHARACTERISTICS
Tj=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VBE(on) Base-Emitter On Voltage
IC= 4A; VCE= 5V
ICBO Collector Cutoff Current
VCB= 50V; IE= 0
IEBO Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
COB
DC Current Gain
Output Capacitance
IC= 4A; VCE= 5V
IE= 0; VCB= 10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
MIN TYP. MAX UNIT
80 V
5V
2.5 V
1.5 V
0.1 mA
0.1 mA
40 240
20
100 pF
8 MHz
‹ hFE-1 Classifications
ROY
40-80 70-140 120-240
isc websitewww.iscsemi.cn
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