SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD381
www.datasheet4u.com
DESCRIPTION ·...
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD381
www.datasheet4u.com
DESCRIPTION ·With TO-220C package ·Complement to type 2SB536 ·Low collector saturation
voltage APPLICATIONS ·Audio frequency power amplifier ·Low speed power switching
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Collector current-peak Base current Ta=25 PT Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 20 150 -50~150 Open emitter Open base Open collector CONDITIONS VALUE 130 120 5 1.5 3.0 0.3 1.5 W UNIT V V V A A A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
www.datasheet4u.com
2SD381
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown
voltage
IC=10mA; IB=0
120
V
VCEsat
Collector-emitter saturation
voltage
IC=1A; IB=0.1A
2.0
V
VBEsat
Base-emitter saturation
voltage
IC=1A; IB=0.1A
1.5
V
ICBO
Collector cut-off current
VCB=120V; IE=0
1.0
µA
IEBO
Emitter cut-off current
VEB=3V; IC=0
1.0
µA
hFE-1
DC current gain
IC=5mA ; VCE=5V
25
hFE-2
DC current gain
IC=0.3A ; VCE=5V
40
250
COB
Output capacitance
IE=0 ; VCB=10V; f=1MHz
25
pF
fT
Transition frequency
IC=0.1A ; VCE=5V
45
MHz
hFE-2 Classif...