DatasheetsPDF.com

2SD415 Datasheet

Part Number 2SD415
Manufacturers NEC
Logo NEC
Description PNP/NPN Silicon Transistor
Datasheet 2SD415 Datasheet2SD415 Datasheet (PDF)

DATA SHEET SILICON POWER TRANSISTOR 2SB548, 549/2SD414, 415 PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES • Ideal for audio amplifier drivers with 30 W to 50 W output • High voltage • Available for small mount spaces due to small and thin package • Easy to be attached to radiators PACKAGE DRAWING (UNIT: mm) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collect.

  2SD415   2SD415






Part Number 2SD415
Manufacturers ETC
Logo ETC
Description Silicon Epitaxial Transistor
Datasheet 2SD415 Datasheet2SD415 Datasheet (PDF)

www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ .

  2SD415   2SD415







PNP/NPN Silicon Transistor

DATA SHEET SILICON POWER TRANSISTOR 2SB548, 549/2SD414, 415 PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES • Ideal for audio amplifier drivers with 30 W to 50 W output • High voltage • Available for small mount spaces due to small and thin package • Easy to be attached to radiators PACKAGE DRAWING (UNIT: mm) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector current Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* PT (Ta = 25°C) PT (Tc = 25°C) Tj Tstg 2SB548/ 2SD414 −80/80 2SB549/ 2SD415 −100/100 Unit V V V A A W W °C °C www.DataSheet.co.kr −100/120 −5.0/5.0 −0.8/0.8 −1.5/1.5 1.0 10 150 −55 to +150 Electrode Connection * PW ≤ 10 ms, duty cycle ≤ 50% ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain Collector saturation voltage Base saturation voltage Gain bandwidth product Collector capacitance Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = −80/80 V, IE = 0 VEB = −3.0/3.0 V, IC = 0 VCE = −5.0/5.0 V, IC = −2.0/2.0 mA* VCE = −5.0/5.0 V, IC = −200/200 mA* IC = −500/500 mA, IB = −50/50 mA* IC = −500/500 mA, IB = −50/50 mA* VCE = −5.0/5.0 V, IC = −100/100 mA VCB = −10/10 V, IE = 0, f = 1.0 MHz 20 40 90 −0.4/0.3 −0.9/0.9 70/45 25/15 320 −2.0/2.0 −1.5/1.5 V V MH.


2008-11-23 : M430    STP80NF12FP    STP80NF55-06FP    MB200    MB201    MB202    MB204    MB206    MB207    G4PH50UD   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)