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2SD555 Transistors Datasheet PDF

Silicon NPN Power Transistors

Silicon NPN Power Transistors

 

 

 

Part Number 2SD555
Description Silicon NPN Power Transistors
Feature SavantIC Semiconductor Product Specific ation Silicon NPN Power Transistors 2 SD555 DESCRIPTION ·With TO-3 package ·High power dissipation ·Complement t o type 2SB600 APPLICATIONS speed ,high current ,high power applications PINNIN G(see Fig.
2) PIN 1 2 3 Base Emitter Col lector Fig.
1 simplified outline (TO-3) and symbol DESCRIPTION www.
DataSheet4U .
com ·For high Absolute maximum ratin gs(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector pow er dissipation Junction temperature Sto rage temperature T .
Manufacture SavantIC
Datasheet
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2SD555

 

 

 


 

 

 

Part Number 2SD555
Description NPN Transistor
Feature isc Silicon NPN Power Transistor DESCRI PTION ·Collector-Emitter Breakdown Vol tage- : V(BR)CEO= 200V (Min) ·High Pow er Dissipation ·Complement to Type 2SB 600 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high current and high power applications.
ABSOLUTE MAXIMUM RATING S(Ta=25℃) SYMBOL PARAMETER MAX UN IT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC C ollector Power Dissipation @TC=25℃ T j Junction Temperature .
Manufacture INCHANGE
Datasheet
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