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2SD797 Datasheet

Part Number 2SD797
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SD797 Datasheet2SD797 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD797 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High current capability ·High power dissipation APPLICATIONS ·High power amplifier applications ·High power switching applications ·DC-DC converter applications ·Regulator applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tst.

  2SD797   2SD797






Part Number 2SD797
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD797 Datasheet2SD797 Datasheet (PDF)

isc Silicon NPN Power Transistor 2SD797 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·High Power Dissipation ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power amplifier applications. ·High Power switching applications. ·DC-DC converter applications. ·Regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 100 V VCEO Col.

  2SD797   2SD797







SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD797 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High current capability ·High power dissipation APPLICATIONS ·High power amplifier applications ·High power switching applications ·DC-DC converter applications ·Regulator applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 100 80 7 30 8 200 175 -65~175 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=50mA ;IB=0 IC=15A; IB=3A IC=15A; IB=3A VCB=100V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=5V IC=15A ; VCE=5V IE=0 ; VCB=10V;f=1.0MHz IC=1A ; VCE=5V 60 10 400 1.5 MIN 80 TYP. www.datasheet4u.com 2SD797 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 COB fT MAX UNIT V 1.5 2.5 0.1 0.1 200 V V mA mA pF MHz Switching times ton tstg tf.


2009-05-03 : K1531    J722T    MJ-179P    MJ-xxx    MJ-179P    MJ-xxx    SI7600    2SC5359    2SC5382    2SC5386   


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