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2SD844 Datasheet

Part Number 2SD844
Manufacturers Toshiba
Logo Toshiba
Description NPN Transistor
Datasheet 2SD844 Datasheet2SD844 Datasheet (PDF)

I: . SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATION. FEATURES • High Collector Current : I C=7A • Low Collector Saturation Voltage : v CE(sat) =0 - 4v (Max -) (at I C =4A) • High Power dissipation : P C=60W (at Tc=25°C) . Complementary to 2SB754. I5.9MAX Unit in mm 0Z.2±O.2 MAXIMUM RATINGS (Ta=25 °C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dis.

  2SD844   2SD844






Part Number 2SD844
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SD844 Datasheet2SD844 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD844 www.datasheet4u.com DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SB754 ·High collector current :IC=7A ·Low collector saturation voltage ·High power dissipation APPLICATIONS ·High current switching applications ·Power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) S.

  2SD844   2SD844







Part Number 2SD844
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD844 Datasheet2SD844 Datasheet (PDF)

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.4V (Max)@IC= 4A ·High Collector Power Dissipation : PC= 60W @TC=25℃ ·Complement to Type 2SB754 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High current switching applications ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Coll.

  2SD844   2SD844







NPN Transistor

I: . SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATION. FEATURES • High Collector Current : I C=7A • Low Collector Saturation Voltage : v CE(sat) =0 - 4v (Max -) (at I C =4A) • High Power dissipation : P C=60W (at Tc=25°C) . Complementary to 2SB754. I5.9MAX Unit in mm 0Z.2±O.2 MAXIMUM RATINGS (Ta=25 °C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Ta=25°C Tc=25°C Storage Temperature Range SYMBOL VCBO VCEO VEBO ic XE pc Tj Tstg RATING 50 50 5 7 -7 2.5 60 150 -55M.50 UNIT V V V A 1. BASE 2. COLLECTOR (HEAT SINK) A S EMITTER W °C TOSHIBA °c Z - 16 B 1 A ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector- Emitter Breakdown Voltage SYMBOL I CBO lEBO v (BR)CE0 TEST CONDITION VCB=50V, I E=0 VEB=5V, I C=0 IC=50mA, Ib=0 Emitter-Base.


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