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2SD880 Datasheet

Part Number 2SD880
Manufacturers Weitron
Logo Weitron
Description NPN Silicon Epitaxial Power Transistor
Datasheet 2SD880 Datasheet2SD880 Datasheet (PDF)

2SD880 NPN Silicon Epitaxial Power Transistor P b Lead(Pb)-Free COLLECTOR 2 BASE 1 1 2 FEATURES: * Low frequency power amplifier * Complement to 2SB834 3 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER TO-220 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 60 60 7 3 1.5 150 -55-.

  2SD880   2SD880






Part Number 2SD880
Manufacturers GME
Logo GME
Description NPN Epitaxial Silicon Transistor
Datasheet 2SD880 Datasheet2SD880 Datasheet (PDF)

NPN Epitaxial Silicon Transistor FEATURES  Low frequency power amplifier.  Complememt to 2SB834. Pb Lead-free Production specification 2SD880 TO-220AB TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO VEBO IC PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction and Storage Temperature Continuous 60 V 7V 3A 1.5 W -55 to +150.

  2SD880   2SD880







Part Number 2SD880
Manufacturers UTC
Logo UTC
Description NPN Transistor
Datasheet 2SD880 Datasheet2SD880 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications.  FEATURES * High DC Current Gain: hFE=200(Max.)(VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A) * Complementary to 2SB834  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free - 2SD880G-AB3-R 2SD880L-TA3-T 2SD880G-TA3-T Pin Assignment: B: Base C: Collector E: Emit.

  2SD880   2SD880







Part Number 2SD880
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD880 Datasheet2SD880 Datasheet (PDF)

isc Silicon NPN Power Transistor 2SD880 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 3.0A ·Complement to Type 2SB834 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-E.

  2SD880   2SD880







Part Number 2SD880
Manufacturers TGS
Logo TGS
Description Transistor
Datasheet 2SD880 Datasheet2SD880 Datasheet (PDF)

TIGER ELECTRONIC CO.,LTD 2SD880 / 2SB834 DESCRIPTION It is intented for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature Symbol VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 60 60 7 3.0 0.5 30 150 -55~150 Unit V V V A A W o o C C Storage Temperature TO-220 ( Ta = 25 C) ELECTRICAL CHARACTER.

  2SD880   2SD880







Part Number 2SD880
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet 2SD880 Datasheet2SD880 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD880 www.datasheet4u.com DESCRIPTION ·With TO-220C package ·Complement to type 2SB834 ·Low collector saturation voltage APPLICATIONS ·Designed for use in audio frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emi.

  2SD880   2SD880







NPN Silicon Epitaxial Power Transistor

2SD880 NPN Silicon Epitaxial Power Transistor P b Lead(Pb)-Free COLLECTOR 2 BASE 1 1 2 FEATURES: * Low frequency power amplifier * Complement to 2SB834 3 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER TO-220 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 60 60 7 3 1.5 150 -55-150 Units V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition Frequency Collector output capacitance Turn on time Storage time Fall time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE (sat) VBE fT Cob ton ts tf IB1=-IB2=0.2A, IC=2A VCC=30V, PW=20µs Test conditions MIN 60 60 7 100 100 60 300 1 1 3 70 0.8 1.5 0.8 V V MHz pF µs µs µs TYP MAX UNIT V V V µA µA IC=100µA, IE=0 IC=50mA, IB=0 IE= 100µA, IC=0 VCB=60V, IE=0 VEB=7V, IC=0 VCE=5V, IC=500mA IC=3A, IB=300mA IC=0.5A, VCE= 5V VCE=5 V, IC=500mA VCB=10V, IE=0, f=1MHz CLASSIFICATION OF hFE Rank Range O 60-120 Y 100-200 GR 150-300 WEITRON http://www.weitron.com.tw 1/3 02-Feb-07 Free Datasheet http://www.datasheet4u.com/ 2SD880 WEITRON http://www.weitron.com.tw .


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