isc Silicon NPN Power Transistor
2SD904
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·Low Collector Satura...
isc Silicon NPN Power Transistor
2SD904
DESCRIPTION ·High Breakdown
Voltage-
: VCBO= 1500V (Min) ·Low Collector Saturation
Voltage-
: VCE(sat)= 5.0V(Max.)@ IC= 3A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
1500
V
VCEO
Collector-Emitter
Voltage
600
V
VEBO
Emitter-Base
Voltage
6
V
IC
Collector Current- Continuous
7
A
ICM
Collector Current- Peak
Collector Power Dissipation @ Ta= 25℃ PC Collector Power Dissipation @ TC= 25℃
TJ
Junction Temperature
10
A
3 W
50
150
℃
Tstg
Storage Temperature Range
-40~150
℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining
Voltage IC= 50mA; IB= 0, L= 35mH
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= 200mA; IC= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 3A; IB= 0.75A
VBE(sat) Base-Emitter Saturation
Voltage
IC= 3A; IB= 0.6A
ICES
Collector Cutoff Current
VCB= 1500V; VBE= 0
IEBO
Collector Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 4A; VCE= 5V
VECF
C-E Diode Forward
Voltage
IF= 4A
2SD904
MIN TYP. MAX UNIT
600
V
6
V
5.0
V
1.6
V
...