2SD974

2SD974 Silicon NPN Epitaxial Application Power switching TV horizontal deflection output Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD974 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Surge collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) I C(surge) PC Tj Tstg Ratings 120 60 5 1 1.5 4 0.9 150 –55 to +150 Unit V V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 120 60 5 — 150 — — — Typ — — — — — — — 0.4 Max — — — 1.0 — 0.3 1.2 — V MHz pF I CP = 1 A, IB1 = –IB2 = 50 mA*1 Unit V V V µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 100 V, IE = 0 VCE = 5 V, IC = 1 A*1 I C = 1 A, IB = 0.05 A*1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Fall time Note: 1. Pulse test V(BR)EBO I CBO hFE VCE(sat) VBE(sat) tf 2 2SD974 Maximum Collector Dissipation Curve 1.2 Collector Power Dissipation PC (W) Collector Current IC (A) Area of Safe Operaton 6 5 4 3 2 1 (20 V, 4 A) f = 15.75 kHz Ta = 25°C 0.8 0.4 (60 V, 0.5 A) 50 100 150 Collector to Emitter Voltage VCE (V) 0 50 100 150 Ambient Temperature Ta (°C) 0 Typical Out...