isc P-Channel MOSFET Transistor
2SJ126
DESCRIPTION ·Low Drain-Source ON Resistance ·High Forward Transfer Admittance ·...
isc P-Channel
MOSFET Transistor
2SJ126
DESCRIPTION ·Low Drain-Source ON Resistance ·High Forward Transfer Admittance ·Low Leakage Current ·Enhancement-Mode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High speed switching application ·Switching regulator ,DC-DC converter and Motor
drive application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage (VGS=0)
-60
V
VGS
Gate-Source
Voltage
±20
V
ID
Drain Current-continuous@ TC=37℃
-10
A
Ptot
Total Dissipation@TC=25℃
40
W
Tj
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
3.1 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
75 ℃/W
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isc P-Channel
Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage VGS= 0; ID= -10mA
VGS(TH) Gate Threshold
Voltage
VDS= VGS; ID= -1mA
RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -5A
IGSS
Gate Source Leakage Current
VGS= -20V;VDS= 0
IDSS
Zero Gate
Voltage Drain Current
VDS= -60V,VGS= 0
VSD
Diode Forward
Voltage
IF=-10 A;VGS= 0
2SJ126
MIN MAX UNIT
-60
V
-1.5 -3.5
V
0.4
Ω
-100 nA
-1
mA
-4.5
V
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