2SJ293

2SJ293 Silicon P-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S November 1996 2SJ293 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ² 10 µs, duty cycle ² 1% 2. Value at TC = 25°C 3. Value at Tch = 25°C, Rg ³ 50 ½ Symbol VDSS VGSS ID I *1 D(pulse) IDR IAP*3 EAR*3 Pch*2 Tch Tstg Ratings –60 ±20 –15 –60 –15 –15 19 30 150 –55 to +150 Unit V V A A A A mJ W °C °C 2 2SJ293 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)D...