2SJ293
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switc...
2SJ293
Silicon P-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings
Outline
TO-220FM
D 12 3 1. Gate
G 2. Drain 3. Source
S
November 1996
2SJ293
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ² 10 µs, duty cycle ² 1%
2. Value at TC = 25°C 3. Value at Tch = 25°C, Rg ³ 50 ½
Symbol
VDSS VGSS ID I *1
D(pulse)
IDR IAP*3 EAR*3 Pch*2
Tch
Tstg
Ratings –60 ±20 –15 –60 –15 –15 19 30 150 –55 to +150
Unit V V A A A A mJ W °C °C
2
2SJ293
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)D...