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2SJ598 MOSFET Datasheet PDF

P-Channel MOSFET

P-Channel MOSFET

 

 

 

Part Number 2SJ598
Description P-Channel MOSFET
Feature isc P-Channel MOSFET Transistor ·FEATU RES ·Static drain-source on-resistance : RDS(on)≤130mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot- to-Lot variations for robust device per formance and reliable operation ·DESC RITION ·Built in gate protection diode ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain- Source Voltage -60 VGS Gate-Source V oltage ±20 ID Drain Current-Continu ous ±12 IDM Drain Current-Single Pu lsed ±30 PD Total Dissipation @TC=2 5℃ 23 Tj Max.
Operating Junction T emperature 150 Tstg Storage Temperat ure -55~150 UNIT V V A A W ℃ ℃ .
Manufacture INCHANGE
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2SJ598

 

 

 


 

 

 

Part Number 2SJ598
Description P-Channel MOSFET
Feature DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ598 SWITCHING P-CHANNEL POWER MOS F ET DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed w ww.
DataSheet4U.
com ORDERING INFORMATIO N PART NUMBER 2SJ598 2SJ598-Z PACKAGE T O-251 (MP-3) TO-252 (MP-3Z) for soleno id, motor and lamp driver.
FEATURES Low on-state resistance: RDS(on)1 = 1 30 mΩ MAX.
(VGS = –10 V, ID = –6 A) RDS(on)2 = 190 mΩ MAX.
(VGS = –4 .
0 V, ID = –6 A)
• Low Ciss: Ciss = 720 pF TYP.

• Built-in gate protecti on diode
• TO-251/TO-252 package ABS OLUTE MAXIMUM RATINGS (TA = 25°C) Drai n to Source Voltage (VGS = 0 V) Gat .
Manufacture NEC
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2SJ598

 

 

 


 

 

 

Part Number 2SJ598
Description MOSFET
Feature SMD Type MOS Field Effect Transistor www .
datasheet4u.
com IC MOSFET 2SJ598 TO- 252 +0.
15 1.
50-0.
15 Features Low on-re sistance RDS(on)1 = 130 m RDS(on)2 = 19 0 m MAX.
(VGS =-10 V, ID = -6 A) MAX.
( VGS = -4.
0 V, ID =-6 A) +0.
2 9.
70-0.
2 + 0.
15 6.
50-0.
15 +0.
2 5.
30-0.
2 Unit: mm +0.
1 2.
30-0.
1 +0.
8 0.
50-0.
7 Built-in g ate protection diode +0.
1 0.
80-0.
1 +0 .
15 0.
50-0.
15 0.
127 max +0.
28 1.
50-0.
1 +0.
25 2.
65-0.
1 +0.
15 5.
55-0.
15 1 G ate 2 Drain 3 Source 2.
3 +0.
15 4.
60-0.
15 +0.
1 0.
60-0.
1 Absolute Maximum Rat ings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain cu rrent (DC) Dra .
Manufacture Guangdong Kexin Industrial
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