DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ598
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ598 is P-channel MOS...
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ598
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.
FEATURES
Low on-state resistance: RDS(on)1 = 130 mΩ MAX. (VGS = –10 V, ID = –6 A) RDS(on)2 = 190 mΩ MAX. (VGS = –4.0 V, ID = –6 A)
Low Ciss: Ciss = 720 pF TYP. Built-in gate protection diode TO-251/TO-252 package
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SJ598
TO-251 (MP-3)
2SJ598-Z
TO-252 (MP-3Z)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source
Voltage (VGS = 0 V) Gate to Source
Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C)
VDSS
–60
V
VGSS
m20
V
ID(DC)
m12
A
ID(pulse)
m30
A
PT
23
W
Total Power Dissipation (TA = 25°C)
PT
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature Single Avalanche Current Note2 Single Avalanche Energy Note2
Tstg –55 to +150 °C
IAS
–12
A
EAS
14.4
mJ
(TO-251) (TO-252)
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = –30 V, RG = 25 Ω, VGS = –20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D14656EJ5V0DS00 (5th edition)
Date Published August 2...
