SMD Type
MOS Field Effect Transistor 2SJ600
Features
Low on-resistance RDS(on)1 = 50 m RDS(on)2 = 79m MAX. (VGS =-10 V, ...
SMD Type
MOS Field Effect Transistor 2SJ600
Features
Low on-resistance RDS(on)1 = 50 m RDS(on)2 = 79m MAX. (VGS =-10 V, ID = -13 A) MAX. (VGS = -4.0 V, ID =-13 A)
+0.15 5.55-0.15
+0.15 6.50-0.15 +0.2 5.30-0.2
IC
MOSFET
TO-252
+0.15 1.50-0.15
+0.1 2.30-0.1 +0.8 0.50-0.7
Unit: mm
+0.2 9.70-0.2
+0.1 0.80-0.1
+0.15 0.50-0.15
Built-in gate protection diode
0.127 max
+0.28 1.50-0.1
+0.25 2.65-0.1
1 Gate 2 Drain 3 Source
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
Absolute Maximum Ratings Ta = 25
Parameter Drain to source
voltage Gate to source
voltage Drain current (DC) Drain current(pulse) * Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s, duty cycle 1% Symbol VDSS VGSS ID ID PD PD Tch Tstg Rating -60 20 25 70 45 1.0 150 -55 to +150 Unit V V A A W W
3.80
Low Ciss: Ciss = 1900 pF TYP.
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1
Free Datasheet http://www.datasheet4u.co
SMD Type
2SJ600
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage current Gate to source cutoff
voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward
Voltage Reverse Recovery Time Reverse Recovery Charge Symbol IDSS IGSS Testconditons VDS=-60V,VGS=0 VGS= 20V,VDS=0 1.5 10 2.0 20 41 55 Min Typ
MOSFET IC
Max -10 10 2.5
Unit A A V S
VGS(off) VDS=-10V,ID...