2SJ605

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ605 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SJ605 2SJ605-S 2SJ605-ZJ 2SJ605-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote FEATURES Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4.0 V, ID = –33 A) Low input capacitance ! Ciss = 4600 pF TYP. (VDS = –10 V, VGS = 0 A) Built-in gate protection diode Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) www.DataSheet4U.com VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg –60 m 20 m 65 m 200 V V A A W W °C °C A mJ (TO-262) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 100 1.5 150 –55 to +150 –45 203 IAS EAS ! Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, VDD = –30 V, RG = 25 Ω, VGS = –20 → 0 V (TO-263, TO-220SMD) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representativ...