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Ordering number : ENN6995
2SJ608
P-Channel Silicon MOSFET
2SJ608
Ultrahigh Sp...
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Ordering number : ENN6995
2SJ608
P-Channel Silicon
MOSFET
2SJ608
Ultrahigh Speed Switching Applications
Features
Package Dimensions
unit : mm 2085A
[2SJ608]
10.5 1.9 4.5
1.2
Low ON-resistance. Ultrahigh speed switching. Low-
voltage drive. Mounting height 9.5mm. Meets radial taping.
2.6 1.4
1.2
7.5
1.0
8.5
1.6 0.5
0.5
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1%
1 : Source 2 : Drain 3 : Gate
2.5 2.5
SANYO : FLP
Ratings -30 ± 20 --4 -16 1.4 150 --55 to +150 Unit V V A A W °C °C
Conditions www.DataSheet4U.com
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown
Voltage Zero-Gate
Voltage Drain Current Gate-to-Source Leakage Current Cutoff
Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=--1mA, VGS=0 VDS=-30V, VGS=0 VGS=± 16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=--2A Ratings min --30 --1 ± 10 --1.0 2.9 4.2 --2.4 typ max Unit V µA µA V S
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be rea...