| Part Number | 2SJ629 |
| Manufacturer | Sanyo Semicon Device |
| Title | P-Channel MOSFET |
| Description | Ordering number : EN9084A 2SJ629 www..com SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ629 Features • • • General-P... |
| Features |
• • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Te... |
| Datasheet | 2SJ629 pdf datasheet |
| Part Number | 2SJ628 |
| Manufacturer | Sanyo Semicon |
| Title | P-Channel Silicon MOSFET |
| Description | Ordering number : ENN7271 2SJ628 P-Channel Silicon MOSFET 2SJ628 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dime. |
| Features |
• • • Package Dimensions unit : mm 2062A [2SJ628] 4.5 1.6 1.5 Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. 0.5 3 1.5 2 3.0 (Bottom view) 1 1.0 0.4 2.5 4.25max 0.4 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta=25°C Parameter www.D. |
| Datasheet | 2SJ628 pdf datasheet |
| Part Number | 2SJ626 |
| Manufacturer | NEC |
| Title | MOS FIELD EFFECT TRANSISTOR |
| Description | The 2SJ626 is a switching device which can be driven directly by a 4.0 V power source. The 2SJ626 features a low on-state resistance and excellent. |
| Features |
a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
0.4 +0.1 –0.05 0.65 –0.15 +0.1 0.16+0.1 –0.06 2.8 ±0.2 3 1.5 FEATURES • 4.0 V drive available • Low on-state resista. |
| Datasheet | 2SJ626 pdf datasheet |
| Part Number | 2SJ625 |
| Manufacturer | NEC |
| Title | MOS FIELD EFFECT TRANSISTOR |
| Description | The 2SJ625 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellen. |
| Features |
a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
0.4 +0.1 –0.05 0.65 –0.15 +0.1 0.16+0.1 –0.06 2.8 ±0.2 3 1.5 0 to 0.1 1 2 FEATURES • 1.8 V drive available • Low on. |
| Datasheet | 2SJ625 pdf datasheet |
| Part Number | 2SJ624 |
| Manufacturer | NEC |
| Title | MOS FIELD EFFECT TRANSISTOR |
| Description | The 2SJ624 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellen. |
| Features |
a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
0.4 +0.1 –0.05 0.65 –0.15 +0.1 0.16 +0.1 –0.06 2.8 ±0.2 3 1.5 FEATURES • 1.8 V drive available • Low on-state resist. |
| Datasheet | 2SJ624 pdf datasheet |
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