2SJ646

Ordering number : ENN8282 2SJ646 P-Channel Silicon MOSFET 2SJ646 Features General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation www.DataSheet4U.com Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions Ratings --30 ±20 --8 Unit V V A A W W °C °C PW≤10µs, duty cycle≤1% Tc=25°C --32 1 15 150 --55 to +150 Channel Temperature Storage Temperature Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss Conditions ID=--1mA, VGS=0V VDS=-30V, VGS=0V VGS=±16V, VDS=0V VDS=-10V, ID=--1mA VDS=-10V, ID=-4A ID=--4A, VGS=-10V ID=--2A, VGS=-4.5V ID=--2A, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz Ratings min --30 --1 ±10 --1.2 3.3 5.5 58 97 110 510 115 78 75 136 154 --2.6 typ max Unit V µA µA V S mΩ mΩ mΩ pF pF pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support syst...