DatasheetsPDF.com

2SJ647 Datasheet

Part Number 2SJ647
Manufacturers NEC
Logo NEC
Description MOS FIELD EFFECT TRANSISTOR
Datasheet 2SJ647 Datasheet2SJ647 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ647 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ647 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ647 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit: mm) 0.3 +0.1 –0 2.1 ± 0.1 1.25 ± 0.1 0.65 FEATURES • 2.5 V drive available • Low on-state resistance .

  2SJ647   2SJ647






Part Number 2SJ649
Manufacturers NEC
Logo NEC
Description MOS FIELD EFFECT TRANSISTOR
Datasheet 2SJ647 Datasheet2SJ649 Datasheet (PDF)

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ649 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ649 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION PART NUMBER 2SJ649 PACKAGE Isolated TO-220 FEATURES • Low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on)2 = 75 mΩ MAX. (VGS = –4.0 V, ID = –10 A) • Low input capacitance: Ciss = 1900 pF TYP. (VDS = –10 V, VGS = 0 V) • Built-in gate p.

  2SJ647   2SJ647







Part Number 2SJ648
Manufacturers NEC
Logo NEC
Description MOS FIELD EFFECT TRANSISTOR
Datasheet 2SJ647 Datasheet2SJ648 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ648 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ648 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ648 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 1.6 ± 0.1 0.8 ± 0.1 PACKAGE DRAWING (Unit: mm) 0.3 +0.1 –0 0.15 +0.1 –0.05 3 0 to 0.1 2 0.2 0.5 +0.1 –0 FEATURES • 2.5 V driv.

  2SJ647   2SJ647







Part Number 2SJ646
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description General Purpose Switching Device Applications
Datasheet 2SJ647 Datasheet2SJ646 Datasheet (PDF)

Ordering number : ENN8282 2SJ646 P-Channel Silicon MOSFET 2SJ646 Features • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation www.DataSheet4U.com Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions Ratings --30 ±20 --8 Unit V V A A W W °C °C PW≤10µs, duty cycle.

  2SJ647   2SJ647







Part Number 2SJ645
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description P CHANNEL MOS SILICON TRANSISTOR
Datasheet 2SJ647 Datasheet2SJ645 Datasheet (PDF)

2SJ645 No. 2SJ645 µ µ µ   6.5 5.0 4 1.5 1.5 2.3 0.5 6.5 5.0 4 2.3 0.5 7.0 5.5 5.5 7.0 0.8 1.6 0.8 1.2 7.5 1 0.6 2 3 2.5 0.85 0.7 0.85 0.5 0.6 1 2 3 0.5 1.2 0 0.2 2.3 2.3 2.3 2.3 1.2 2SJ645 Ω Ω 0V --4.5V VIN VIN VDD= --10V ID= --4A RL=2.5W VOUT PW=10ms D.C. 1% G D P.G 50W 2SJ645 S .

  2SJ647   2SJ647







MOS FIELD EFFECT TRANSISTOR

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ647 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ647 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ647 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit: mm) 0.3 +0.1 –0 2.1 ± 0.1 1.25 ± 0.1 0.65 FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.2 A) RDS(on)2 = 1.55 Ω MAX. (VGS = −4.0 V, ID = −0.2 A) RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A) 2.0 ± 0.2 2 0.65 1 3 0.3 Marking 0.15 +0.1 –0.05 0.9 ± 0.1 0.3 +0.1 –0 ORDERING INFORMATION www.DataSheet4U.com PART NUMBER 2SJ647 PACKAGE SC-70 (SSP) 0 to 0.1 1 : Source 2 : Gate 3 : Drain Remark Marking: H22 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25°C) Drain Current (pulse) Note1 Note2 EQUIVALENT CIRCUIT −20 m12 m0.4 m1.6 0.2 150 −55 to +150 V V A A W °C °C Gate Gate Protection Diode Body Diode Drain VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg Total Power Dissipation Channel Temperature Storage Temperature Source Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2 2. Mounted on FR-4 board of 2500 mm x 1.1 mm. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actual.


2007-07-12 : BF194B    BF194A    BF195C    BF195D    BF167    BF173    BF180    BF182    PHAP3361    PHAP338x   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)