2SJ664

Ordering number : EN8589 2SJ664 P-Channel Silicon MOSFET 2SJ664 Features General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) www.DataSheet4U.com Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV Conditions Ratings --100 ±20 --17 Unit V V A A W W °C °C mJ A PW≤10µs, duty cycle≤1% Tc=25°C --68 1.65 50 150 --55 to +150 38 --17 Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Note : *1 VDD=30V, L=200µH, IAV=--17A *2 L≤200µH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=--1mA, VGS=0V VDS=-100V, VGS=0V VGS= ±16V, VDS=0V VDS=-10V, ID=--1mA VDS=-10V, ID=-8A ID=--8A, VGS=-10V ID=--8A, VGS=-4V Ratings min --100 --1 ±10 --1.2 9 15 102 138 136 193 --2.6 typ max Unit V µA µA V S mΩ mΩ Marking : J664 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels...