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2SJ667 Datasheet

Part Number 2SJ667
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description P-Channel MOSFET
Datasheet 2SJ667 Datasheet2SJ667 Datasheet (PDF)

Ordering number : ENN8248 2SJ667 P-Channel Silicon MOSFET 2SJ667 Features • • • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) www.DataSheet4U.com Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV Conditions Ratings --100 ±20.

  2SJ667   2SJ667






Part Number 2SJ668
Manufacturers Toshiba
Logo Toshiba
Description Silicon P-Channel MOSFET
Datasheet 2SJ667 Datasheet2SJ668 Datasheet (PDF)

2SJ668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOSIII) 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Applications z 4 V gate drive z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.) z High forward transfer admittance: |Yfs| = 5.0 S (typ.) z Low leakage current: IDSS = −100 μA (max) (VDS = −60 V) z Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 1.5 ± 0.2 6.5 ± 0.2 5.

  2SJ667   2SJ667







Part Number 2SJ665
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description P-Channl Silicon MOSFET
Datasheet 2SJ667 Datasheet2SJ665 Datasheet (PDF)

Ordering number : EN8590A 2SJ665 P-Channel Power MOSFET –100V, –27A, 77mΩ, TO-263-2L http://onsemi.com Features • ON-resistance RDS(on)1=59mΩ(typ.) • 4V drive • Input capacitance Ciss=4200pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 .

  2SJ667   2SJ667







Part Number 2SJ664
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description P-Channel MOSFET
Datasheet 2SJ667 Datasheet2SJ664 Datasheet (PDF)

Ordering number : EN8589 2SJ664 P-Channel Silicon MOSFET 2SJ664 Features • • • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) www.DataSheet4U.com Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV Conditions Ratings --100 ±20 .

  2SJ667   2SJ667







Part Number 2SJ661
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description P-Channel Power MOSFET
Datasheet 2SJ667 Datasheet2SJ661 Datasheet (PDF)

Ordering number : EN8586A 2SJ661 P-Channel Power MOSFET –60V, –38A, 39mΩ, TO-262-3L/TO-263-2L http://onsemi.com Features • ON-resistance RDS(on)1=29.5mΩ(typ.) • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Package Dimensions unit : mm (typ) 7537-001 • Input capacitance Ciss=4360pF (typ.) Conditions PW≤10μs, duty cycl.

  2SJ667   2SJ667







P-Channel MOSFET

Ordering number : ENN8248 2SJ667 P-Channel Silicon MOSFET 2SJ667 Features • • • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) www.DataSheet4U.com Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV Conditions Ratings --100 ±20 --42 Unit V V A A W W °C °C mJ A PW≤10µs, duty cycle≤1% Tc=25°C --168 2.5 100 150 --55 to +150 58 --42 Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Note : *1 VDD=30V, L=50µH, IAV=--42A *2 L≤50µH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=--1mA, VGS=0 VDS=-100V, VGS=0 VGS= ±16V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=-21A ID=--21A, VGS=--10V ID=--21A, VGS=--4V Ratings min --100 --1 ±10 --1.2 22 37 42 52 56 74 --2.6 typ max Unit V µA µA V S mΩ mΩ Marking : J667 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels .


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