2SJ680

2SJ680 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOS V) 2SJ680 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = −100 μA (max) (VDS = −200 V) Enhancement mode: Vth = −1.5 to −3.5 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg −200 V −200 V ±20 V −2.5 A −10 20 W 97.5 mJ −2.5 A 2.0 mJ 150 °C −55 to 150 °C 6.5 ± 0.2 5.2 ± 0.2 Unit: mm 0.6 MAX. 1.5 ± 0.2 1.6 5.5 ± 0.2 0.9 1.1 ± 0.2 0.6 MAX. 4.1 ± 0.2 5.7 2.3 2.3 2.3 ± 0.2 123 0.8 MAX. 1.1 MAX. 0.6 ± 0.15 0.6 ± 0.15 1. GATE 2. DRAIN （HEAT SINK） 3. SOURSE 2 1 3 JEDEC ― JEITA ― TOSHIBA 2-7J2B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/curr...