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2SJ681 Converter Datasheet PDFRelay Driver DC-DC Converter Relay Driver DC-DC Converter |
| Part Number | 2SJ681 |
|---|---|
| Description | Relay Driver DC-DC Converter |
| Feature | www. DataSheet4U. com 2SJ681 TOSHIBA Fiel d Effect Transistor Silicon P Channel M OS Type (U−MOSIII) 2SJ681 Relay Driv e, DC−DC Converter and Motor Drive Ap plications ６．５±０．２ ５． ±０．２ １．５±０．２ Uni t: mm ０．６ MAX． z High forward transfer admittance: |Yfs| = 5. 0 S (typ . ) z Low leakage current: IDSS = −100 µA (max) (VDS = −60 V) z Enhancemen t mode: Vth = −0. 8 to −2. 0 V (VDS = −10 V, ID = −1 mA) １．６ z L ow drain−source ON resistance: RDS (O N) = 0. 12 Ω (typ. ) ０．９ ５． ±０．２ z 4-V gate drive １． １±０．２ ４．１±０．２ ．７ ０．６ MAX ２．３ ２ ．３ ２．３±０．２ ０．６± ０．１５ ０．６±０．１５ ２ ３ Maximum Ratings (Ta = 25 C) Characte . |
| Manufacture | Toshiba |
| Datasheet |
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| Part Number | 2SJ6812 |
|---|---|
| Description | NPN Triple Diffused Planar Silicon Transistor |
| Feature | www. DataSheet4U. com FJAF6812 FJAF6812 High Voltage Color Display Horizontal D eflection Output • High Collector-Bas e Breakdown Voltage : BVCBO = 1500V • High Switching Speed : tF(typ. ) =0. 1µ s • For Color Monitor TO-3PF 1 1. Base 2. Collector 3. Emitter NPN Triple Diff used Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherw ise noted Symbol VCBO VCEO VEBO IC ICP* PC TJ TSTG Parameter Collector-Base Vo ltage Collector-Emitter Voltage Emitter -Base Voltage Collector Current (DC) Co llector Current (Pulse) Collector Dissi pation Junction Temperature Storage Tem perature Rating 1500 7 . |
| Manufacture | Fairchild Semiconductor |
| Datasheet |
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| Part Number | 2SJ681 |
|---|---|
| Description | Relay Driver DC-DC Converter |
| Feature | www. DataSheet4U. com 2SJ681 TOSHIBA Fiel d Effect Transistor Silicon P Channel M OS Type (U−MOSIII) 2SJ681 Relay Driv e, DC−DC Converter and Motor Drive Ap plications ６．５±０．２ ５． ±０．２ １．５±０．２ Uni t: mm ０．６ MAX． z High forward transfer admittance: |Yfs| = 5. 0 S (typ . ) z Low leakage current: IDSS = −100 µA (max) (VDS = −60 V) z Enhancemen t mode: Vth = −0. 8 to −2. 0 V (VDS = −10 V, ID = −1 mA) １．６ z L ow drain−source ON resistance: RDS (O N) = 0. 12 Ω (typ. ) ０．９ ５． ±０．２ z 4-V gate drive １． １±０．２ ４．１±０．２ ．７ ０．６ MAX ２．３ ２ ．３ ２．３±０．２ ０．６± ０．１５ ０．６±０．１５ ２ ３ Maximum Ratings (Ta = 25 C) Characte . |
| Manufacture | Toshiba |
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