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2SJ681 Converter Datasheet PDF

Relay Driver DC-DC Converter

Relay Driver DC-DC Converter

 

 

 

Part Number 2SJ681
Description Relay Driver DC-DC Converter
Feature www.
DataSheet4U.
com 2SJ681 TOSHIBA Fiel d Effect Transistor Silicon P Channel M OS Type (U−MOSIII) 2SJ681 Relay Driv e, DC−DC Converter and Motor Drive Ap plications 6.5±0.2 5. ±0.2 1.5±0.2 Uni t: mm 0.6 MAX. z High forward transfer admittance: |Yfs| = 5.
0 S (typ .
) z Low leakage current: IDSS = −100 µA (max) (VDS = −60 V) z Enhancemen t mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA) 1.6 z L ow drain−source ON resistance: RDS (O N) = 0.
12 Ω (typ.
) 0.9 5. ±0.2 z 4-V gate drive 1. 1±0.2 4.1±0.2 .7 0.6 MAX 2.3 2 .3 2.3±0.2 0.6± 0.15 0.6±0.15 2 3 Maximum Ratings (Ta = 25 C) Characte .
Manufacture Toshiba
Datasheet
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2SJ681

 

 

 


 

 

 

Part Number 2SJ6812
Description NPN Triple Diffused Planar Silicon Transistor
Feature www.
DataSheet4U.
com FJAF6812 FJAF6812 High Voltage Color Display Horizontal D eflection Output
• High Collector-Bas e Breakdown Voltage : BVCBO = 1500V
• High Switching Speed : tF(typ.
) =0.
1µ s
• For Color Monitor TO-3PF 1 1.
Base 2.
Collector 3.
Emitter NPN Triple Diff used Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherw ise noted Symbol VCBO VCEO VEBO IC ICP* PC TJ TSTG Parameter Collector-Base Vo ltage Collector-Emitter Voltage Emitter -Base Voltage Collector Current (DC) Co llector Current (Pulse) Collector Dissi pation Junction Temperature Storage Tem perature Rating 1500 7 .
Manufacture Fairchild Semiconductor
Datasheet
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2SJ6812

 

 

 


 

 

 

Part Number 2SJ681
Description Relay Driver DC-DC Converter
Feature www.
DataSheet4U.
com 2SJ681 TOSHIBA Fiel d Effect Transistor Silicon P Channel M OS Type (U−MOSIII) 2SJ681 Relay Driv e, DC−DC Converter and Motor Drive Ap plications 6.5±0.2 5. ±0.2 1.5±0.2 Uni t: mm 0.6 MAX. z High forward transfer admittance: |Yfs| = 5.
0 S (typ .
) z Low leakage current: IDSS = −100 µA (max) (VDS = −60 V) z Enhancemen t mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA) 1.6 z L ow drain−source ON resistance: RDS (O N) = 0.
12 Ω (typ.
) 0.9 5. ±0.2 z 4-V gate drive 1. 1±0.2 4.1±0.2 .7 0.6 MAX 2.3 2 .3 2.3±0.2 0.6± 0.15 0.6±0.15 2 3 Maximum Ratings (Ta = 25 C) Characte .
Manufacture Toshiba
Datasheet
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