2SJ687

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ687 SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The 2SJ687 is P-channel MOSFET device and a excellent switch that can be driven by a low power-supply voltage. FEATURES Low on-state resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = −4.5 V, ID = −10 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = −3.0 V, ID = −10 A) RDS(on)3 = 20 mΩ MAX. (VGS = −2.5 V, ID = −10 A) 2.5 V drive available Avalanche capability ratings ORDERING INFORMATION PART NUMBER 2SJ687-ZK-E1-AY 2SJ687-ZK-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel PACKAGE TO-252 (MP-3ZK) 0.27 g TYP. Note Pb-free (This product does not contain Pb in external electrode.) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 (TO-252) −20 m12 m20 m60 36 1.0 150 −55 to +150 −20 40 V V A A W W °C °C A mJ VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = −10 V, RG = 25 Ω, VGS = −12 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please c...