2SK0123

Silicon Junction FETs (Small Signal) 2SK0123 (2SK123) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone s Features q High mutual conductance gm q Low noise voltage of NV 1 2 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 10˚ Unit: mm 0.40+0.10 –0.05 3 0.16+0.10 –0.06 1.50+0.25 –0.05 2.8+0.2 –0.3 s Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Drain to Gate voltage Drain to Source current Drain to Gate current Gate to Source current Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDSO VDGO IDSO IDGO IGSO PD Topr Tstg Ratings 20 20 2 2 2 200 −20 to +80 −55 to +150 Unit V V mA mA mA mW °C °C 1.1+0.2 –0.1 (0.65) 0 to 0.1 1.1+0.3 –0.1 1: Drain 2: Source 3: Gate Mini3-G1 Package Marking Symbol: 1H Note: For the forming type, (Y) is indicated after the part No. s Electrical Characteristics (Ta = 25°C) Parameter Current consumption Drain to Source cut-off current Mutual conductance Noise figure Symbol ID IDSS gm NV Conditions VD = 4.5 V, CO = 10 pF, RD = 2.2 kΩ ± 1% VDS = 4.5 V, VGS = 0 VD = 4.5 V, VGS = 0, f = 1 kHz VD = 4.5V, RD = 2.2 kΩ ± 1% CO = 10 pF, A-curve −3 VD = 4.5 V, RD = 2.2 kΩ ± 1% CO = 10 pF, eG = 10 mV, f = 1 kHz VD = 12 V, RD = 2.2 kΩ ± 1% CO = 10 pF, eG = 10 mV, f = 1 kHz VD = 1.5 V, RD = 2.2 kΩ ± 1% CO = 10 pF, eG = 10 mV, f = 1 kHz 2 min 100 95 0.7 1.6 4 typ max 600 480 Unit µA µA mS µV GV1 Voltage gain GV2 GV3 Voltage gain difference ∆|GV2 − ...