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2SK0123 MOSFET Datasheet PDFSilicon N-Channel MOSFET Silicon N-Channel MOSFET |
| Part Number | 2SK0123 |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Feature | Silicon Junction FETs (Small Signal)
2S K0123 (2SK123)
Silicon N-Channel Juncti on FET
For impedance conversion in low frequency For electret capacitor microp hone s Features
q High mutual conductan ce gm q Low noise voltage of NV
1 2 (0. 95) (0. 95) 1. 9±0. 1 2. 90+0. 20 –0. 05 1 0˚ Unit: mm 0. 40+0. 10 –0. 05 3 0. 16+ 0. 10 –0. 06 1. 50+0. 25 –0. 05 2. 8+0. 2 –0. 3 s Absolute Maximum Ratings (T a = 25°C) Parameter Drain to Source vo ltage Drain to Gate voltage Drain to So urce current Drain to Gate current Gate to Source current Allowable power diss ipation Operating ambient temperature S torage temperature Symbol V . |
| Manufacture | Panasonic Semiconductor |
| Datasheet |
|
|
| Part Number | 2SK0123 |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Feature | Silicon Junction FETs (Small Signal)
2S K0123 (2SK123)
Silicon N-Channel Juncti on FET
For impedance conversion in low frequency For electret capacitor microp hone s Features
q High mutual conductan ce gm q Low noise voltage of NV
1 2 (0. 95) (0. 95) 1. 9±0. 1 2. 90+0. 20 –0. 05 1 0˚ Unit: mm 0. 40+0. 10 –0. 05 3 0. 16+ 0. 10 –0. 06 1. 50+0. 25 –0. 05 2. 8+0. 2 –0. 3 s Absolute Maximum Ratings (T a = 25°C) Parameter Drain to Source vo ltage Drain to Gate voltage Drain to So urce current Drain to Gate current Gate to Source current Allowable power diss ipation Operating ambient temperature S torage temperature Symbol V . |
| Manufacture | Panasonic Semiconductor |
| Datasheet |
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