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2SK0614 MOSFET Datasheet PDFSilicon N-Channel MOSFET Silicon N-Channel MOSFET |
| Part Number | 2SK0614 |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Feature | Silicon MOS FETs (Small Signal)
2SK0614 (2SK614)
Silicon N-Channel MOS FET
For switching
unit: mm
I Features
5. 0±0 . 2 4. 0±0. 2 0. 7±0. 1 0. 7±0. 2 12. 9± 0. 5 G Low ON-resistance RDS(on) G High -speed switching G Allowing to be drive n directly by CMOS and TTL I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel te mperature Storage temperature Symbol VD S VGSO ID IDP PD Tch Tstg Ratings 80 20 ±0. 5 ±1 750 150 −55 to +150 Unit V V A A mW °C °C 0. 45+0. 15 –0. 1 2. 5+ 0. 6 –0. 2 1 2 3 5. 1±0. 2 0. 45 . |
| Manufacture | Panasonic Semiconductor |
| Datasheet |
|
|
| Part Number | 2SK0614 |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Feature | Silicon MOS FETs (Small Signal)
2SK0614 (2SK614)
Silicon N-Channel MOS FET
For switching
unit: mm
I Features
5. 0±0 . 2 4. 0±0. 2 0. 7±0. 1 0. 7±0. 2 12. 9± 0. 5 G Low ON-resistance RDS(on) G High -speed switching G Allowing to be drive n directly by CMOS and TTL I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel te mperature Storage temperature Symbol VD S VGSO ID IDP PD Tch Tstg Ratings 80 20 ±0. 5 ±1 750 150 −55 to +150 Unit V V A A mW °C °C 0. 45+0. 15 –0. 1 2. 5+ 0. 6 –0. 2 1 2 3 5. 1±0. 2 0. 45 . |
| Manufacture | Panasonic Semiconductor |
| Datasheet |
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