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2SK0655 MOSFET Datasheet PDFSilicon N-Channel MOSFET Silicon N-Channel MOSFET |
| Part Number | 2SK0655 |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Feature | Silicon MOS FETs (Small Signal)
2SK0655 (2SK655)
Silicon N-Channel MOS FET
uni t: mm
For switching I Features
0. 75 ma x. 4. 0±0. 2 (0. 8) 3. 0±0. 2 2. 0±0. 2 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max dr ain current Allowable power dissipation Channel temperature Storage temperatur e Symbol VDS VGSO ID IDP PD Tch Tstg Ra tings 50 8 100 200 200 150 −55 to +15 0 Unit V V mA mA mW °C °C 0. 45+0. 20 –0. 10 (2. 5) (2. 5) 0. 45+0. 20 –0. 10 0 . 7±0. 1 15. 6±0. 5 G High-speed switch ing G Allowing to supply with the radia l taping (0. 8) 7. 6 2 3 1 . |
| Manufacture | Panasonic Semiconductor |
| Datasheet |
|
|
| Part Number | 2SK0655 |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Feature | Silicon MOS FETs (Small Signal)
2SK0655 (2SK655)
Silicon N-Channel MOS FET
uni t: mm
For switching I Features
0. 75 ma x. 4. 0±0. 2 (0. 8) 3. 0±0. 2 2. 0±0. 2 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max dr ain current Allowable power dissipation Channel temperature Storage temperatur e Symbol VDS VGSO ID IDP PD Tch Tstg Ra tings 50 8 100 200 200 150 −55 to +15 0 Unit V V mA mA mW °C °C 0. 45+0. 20 –0. 10 (2. 5) (2. 5) 0. 45+0. 20 –0. 10 0 . 7±0. 1 15. 6±0. 5 G High-speed switch ing G Allowing to supply with the radia l taping (0. 8) 7. 6 2 3 1 . |
| Manufacture | Panasonic Semiconductor |
| Datasheet |
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