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2SK0656 Datasheet

Part Number 2SK0656
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon N-Channel MOSFET
Datasheet 2SK0656 Datasheet2SK0656 Datasheet (PDF)

Silicon MOS FETs (Small Signal) 2SK0656 (2SK656) Silicon N-Channel MOS FET For switching 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 200 150 −55 to +150 Unit V V mA mA mW °C °C 0.45+0.20 –0.10 (2.5) (2.5) 0.45+0.20 –0.10 0.7±0.

  2SK0656   2SK0656






Part Number 2SK0657
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon N-Channel MOSFET
Datasheet 2SK0656 Datasheet2SK0657 Datasheet (PDF)

Silicon MOS FETs (Small Signal) 2SK0657 (2SK657) Silicon N-Channel MOS FET Unit: mm For switching 6.9±0.1 (0.4) 2.5±0.1 (1.0) (1.0) 3.5±0.1 2.0±0.2 2.4±0.2 (1.5) (1.5) I Features 1.0±0.1 (0.85) 1.25±0.05 0.45±0.05 0.55±0.1 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 ±100 ±200 40.

  2SK0656   2SK0656







Part Number 2SK0655
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon N-Channel MOSFET
Datasheet 2SK0656 Datasheet2SK0655 Datasheet (PDF)

Silicon MOS FETs (Small Signal) 2SK0655 (2SK655) Silicon N-Channel MOS FET unit: mm For switching I Features 0.75 max. 4.0±0.2 (0.8) 3.0±0.2 2.0±0.2 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 200 150 −55 to +150 Unit V V mA mA mW °C °C 0.45+0.20 –0.10 (2.5) (2.5) 0.45+0.20 –0.10 0.7±0.

  2SK0656   2SK0656







Silicon N-Channel MOSFET

Silicon MOS FETs (Small Signal) 2SK0656 (2SK656) Silicon N-Channel MOS FET For switching 4.0±0.2 2.0±0.2 (0.8) 3.0±0.2 unit: mm I Features I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 100 200 200 150 −55 to +150 Unit V V mA mA mW °C °C 0.45+0.20 –0.10 (2.5) (2.5) 0.45+0.20 –0.10 0.7±0.1 1 15.6±0.5 G High-speed switching G Small drive current owing to high input inpedance G High electrostatic breakdown voltage 2 3 (0.8) 0.75 max. 7.6 1: Source 2: Drain 3: Gate NS-B1 Package Internal Connection D R1 G R2 S I Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance High level output voltage Low level output voltage Input resistance Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VOH VOL R1 + R2*1 Coss ton*2 toff *2 Conditions VDS = 10V, VGS = 0 VGS = 8V, VDS = 0 ID = 100µA, VGS = 0 ID = 100µA, VDS = VGS ID = 20mA, VGS = 5V ID = 20mA, VDS = 5V, f = 1kHz VDD = 5V, VGS = 1V, RL = 200Ω VDD = 5V, VGS = 5V, RL = 200Ω min typ max 10 Unit µA µA V V Ω mS V 40 50 1.5 80 3.5 50 20 4.5 35 1 100 9 200 V kΩ pF pF pF µs µs Input capacitance (Common Source) Ciss Output capacitance (Common Source) VD.


2006-01-06 : 2SK0065    2SK65    2SK0665    2SK665    2SK0664    2SK664    2SK0663    2SK663    2SK0662    2SK662   


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