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2SK0656 MOSFET Datasheet PDFSilicon N-Channel MOSFET Silicon N-Channel MOSFET |
　
　
　
| Part Number | 2SK0656 |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Feature | Silicon MOS FETs (Small Signal)
2SK0656 (2SK656)
Silicon N-Channel MOS FET
For switching
4. 0±0. 2 2. 0±0. 2 (0. 8) 3. 0 ±0. 2 unit: mm I Features I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max dra in current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ra tings 50 8 100 200 200 150 −55 to +15 0 Unit V V mA mA mW °C °C 0. 45+0. 20 –0. 10 (2. 5) (2. 5) 0. 45+0. 20 –0. 10 0 . 7±0. 1 1 15. 6±0. 5 G High-speed swi tching G Small drive current owing to h igh input inpedance G High e . |
| Manufacture | Panasonic Semiconductor |
| Datasheet |
|
|
　
　
　
　
　
　
| Part Number | 2SK0656 |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Feature | Silicon MOS FETs (Small Signal)
2SK0656 (2SK656)
Silicon N-Channel MOS FET
For switching
4. 0±0. 2 2. 0±0. 2 (0. 8) 3. 0 ±0. 2 unit: mm I Features I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max dra in current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ra tings 50 8 100 200 200 150 −55 to +15 0 Unit V V mA mA mW °C °C 0. 45+0. 20 –0. 10 (2. 5) (2. 5) 0. 45+0. 20 –0. 10 0 . 7±0. 1 1 15. 6±0. 5 G High-speed swi tching G Small drive current owing to h igh input inpedance G High e . |
| Manufacture | Panasonic Semiconductor |
| Datasheet |
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