2SK0657

Silicon MOS FETs (Small Signal) 2SK0657 (2SK657) Silicon N-Channel MOS FET Unit: mm For switching 6.9±0.1 (0.4) 2.5±0.1 (1.0) (1.0) 3.5±0.1 2.0±0.2 2.4±0.2 (1.5) (1.5) I Features 1.0±0.1 (0.85) 1.25±0.05 0.45±0.05 0.55±0.1 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSO ID IDP PD Tch Tstg Ratings 50 8 ±100 ±200 400 150 −55 to +150 Unit V V mA mA mW °C °C 1 (2.5) 2 (2.5) 3 1: Source 2: Drain 3: Gate EIAJ: SC-71 M-A1 Package Internal Connection D G S I Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Turn-on time Turn-off time * Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | Ciss Coss Crss ton* toff* Conditions VDS = 10V, VGS = 0 VGS = 8V, VDS = 0 ID = 100µA, VGS = 0 ID = 100µA, VDS = VGS ID = 20mA, VGS = 5V ID = 20mA, VDS = 5V, f = 1kHz VDS = 5V, VGS = 0, f = 1MHz VDD = 5V, VGS = 0 to 5V, RL = 200Ω VDD = 5V, VGS = 5 to 0V, RL = 200Ω min typ max 10 50 3.5 50 15 6 1.2 50 1.5 20 10 20 Unit µA µA V V Ω mS pF pF pF ns ns ton, toff measurement circuit Vout 200Ω Vin VDD = 5V Vout 10% 10% 90% ton toff 90% 5...