2SK1528(L), 2SK1528(S)
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • H...
2SK1528(L), 2SK1528(S)
Silicon N Channel MOS FET
Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
REJ03G0951-0200 (Previous: ADE-208-1291)
Rev.2.00 Sep 07, 2005
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L))
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1))
4
D
4
G
12 3
123 S
1. Gate 2. Drain 3. Source 4. Drain
Rev.2.00 Sep 07, 2005 page 1 of 7
2SK1528(L), 2SK1528(S)
Absolute Maximum Ratings
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
Symbol VDSS VGSS ID
ID(pulse)*1 IDR
Pch*2 Tch Tstg
Item
Symbol Min
Typ
Drain to source breakdown
voltage V(BR)DSS 900
—
Gate to source breakdown
voltage V(BR)GSS ±30
—
Gate to source leak current
IGSS
—
—
Zero gate
voltage drain current
IDSS
—
—
Gate to source cutoff
voltage
VGS(off)
2.0
—
Static drain to source on state resistance
RDS(on)
—
3.0
Forward transfer admittance
|yfs|
1.7
2.7
Input capacitance
Ciss
—
740
Output capacitance
Coss
—
305
Reverse transfer capacitance
Crss
—
150
Turn-on delay time
td(on)
—
15
Rise time
tr
—
60
Turn-off delay time
td(off)
—
100
Fall time
tf
—...