2SK1740

Ordering number:EN4112 N-Channel Junction Silicon FET 2SK1740 HF amplifiers low frequency amplifiers analog switches Features · Adoption of FBET process. · Largeyfs. · Small Ciss. · Small-sized package permitting 2SK1740-applied sets to be made small and slim. Package Dimensions unit:mm 2050A [2SK1740] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature VDSX VGDS IG ID PD Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Gate-to-Drain Breakdown Voltage V(BR)GDS IG=–10µA, VDS=0 Gate-to-Source Leakage Current IGSS VGS=–20V, VDS=0V Cutoff Voltage VGS(off) VDS=10V, ID=100µA Zero-Gate Voltage Drain Current IDSS* VDS=10V, VGS=0V Forward Transfer Admittance | yfs |1 | yfs |2 VDS=10V, ID=10mA, f=1kHz VDS=10V, VGS=0V, f=1kHz * : Pulse Test Pulse Width ≤ 2ms * : The 2SK1740 is classified by IDSS as follows (unit : mA) : 40 3 52 48 4 63 57 5 75 Marking : IJ IDSS rank : 3, 4, 5 0.8 1.1 1 : Source 2 : Drain 3 : Gate SANYO : CP Ratings 40 –40 10 75 250 150 –55 to +150 Unit V V mA mA mW ˚C ˚C Ratings min typ max Unit –40 V –1.0 nA –2.0 –3.0 –5.0 V 40∗ 75∗ mA 10 15 mS 22 30 mS Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can ...