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2SK2210 Datasheet

Part Number 2SK2210
Manufacturers Panasonic
Logo Panasonic
Description Silicon N-Channel Power F-MOS
Datasheet 2SK2210 Datasheet2SK2210 Datasheet (PDF)

Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg.efourDisMcaionnttie Productnnu Power F-MOS FETs 2SK2210 Silicon N-Channel Power F-MOS s Features q Avalanche energy capability guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown s Applications q Non-contact relay q Solenoid drive q Motor drive q Control equipment q Sw.

  2SK2210   2SK2210






Part Number 2SK2219
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description N-Channel Junction Silicon FET
Datasheet 2SK2210 Datasheet2SK2219 Datasheet (PDF)

Ordering number:ENN4755 N-Channel Junction Silicon FET 2SK2219 Capacitor Microphone Applications Features · Ultrasmall-sized package permitting 2SK2219applied sets to be made small and slim. · Especially suited for use in audio, telephone capacitor microphones. · Excellent voltage characteristic. · Excellent transient characteristic. · Adoption of FBET process. Package Dimensions unit:mm 2058A [2SK2219] 0.425 0.3 3 0.15 0 to 0.1 0.2 2.1 1.250 0.425 12 0.65 0.65 2.0 0.3 0.6 0.9 Specif.

  2SK2210   2SK2210







Part Number 2SK2218
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description N-Channel Junction Silicon FET
Datasheet 2SK2210 Datasheet2SK2218 Datasheet (PDF)

Ordering number:ENN5202 N-Channel Junction Silicon FET 2SK2218 High-Frequency Low-Noise Amplifier Applications Features · Adoption of FBET process. · Amateur radio equipment. · UHF amplifiers, MIX, OSC, analog switches. · Large | yfs |. · Small Ciss. Package Dimensions unit:mm 2125 [2SK2218] 4.5 1.6 1.5 1.0 2.5 4.25max Specifications 0.4 0.5 32 1.5 3.0 1 0.75 0.4 1 : Source 2 : Gate 3 : Drain SANYO : PCP (Bottom View) Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source V.

  2SK2210   2SK2210







Part Number 2SK2216
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon N-Channel MOS FET
Datasheet 2SK2210 Datasheet2SK2216 Datasheet (PDF)

2SK2216 Silicon N-Channel MOS FET ADE-208-346A 2nd. Edition Application UHF power amplifier Features • High power output, high gain, high efficiency PG = 9.7 dB, Pout = 140 W, ηD = 55% typ (f = 860 MHz) • Compact package Suitable for push - pull circuit Outline 2SK2216 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VDSS VGSS ID Pch* Tch Tstg .

  2SK2210   2SK2210







Part Number 2SK2215-01S
Manufacturers Fuji Electric
Logo Fuji Electric
Description N-channel MOS-FET
Datasheet 2SK2210 Datasheet2SK2215-01S Datasheet (PDF)

2SK2215-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 600V 1,2Ω 8A 80W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Curre.

  2SK2210   2SK2210







Part Number 2SK2215-01L
Manufacturers Fuji Electric
Logo Fuji Electric
Description N-channel MOS-FET
Datasheet 2SK2210 Datasheet2SK2215-01L Datasheet (PDF)

2SK2215-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 600V 1,2Ω 8A 80W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Curre.

  2SK2210   2SK2210







Silicon N-Channel Power F-MOS

Plehtatsp:e/M/vaiiwsniwttefw.nolsalenocmwiie/cnpolDgdiina.ssUncpceRoaodLnnnttiapidalinmsnbasuaouiocneneniuoetdtdcnd.ieltticnnaytnmocalp.eujaniuesepctn/ddtieeetentsnfyn/yfopaproelnelmdcoaetwitioynnpg.efourDisMcaionnttie Productnnu Power F-MOS FETs 2SK2210 Silicon N-Channel Power F-MOS s Features q Avalanche energy capability guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown s Applications q Non-contact relay q Solenoid drive q Motor drive q Control equipment q Switching mode regulator s Absolute Maximum Ratings (Tc = 25˚C) Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse Avalanche energy capability Allowable power dissipation TC= 25˚C Ta= 25˚C Channel temperature Storage temperature * L= 5mH, IL= 4A, 1 pulse Symbol VDSS VGSS ID IDP EAS * PD Tch Tstg Rating 750 ±30 ±4 ±8 40 50 2 150 –55 to +150 Unit V V A A mJ W ˚C ˚C s Electrical Characteristics (Tc = 25˚C) Parameter Drain-Source cut-off current Gate-Source leakage current Drain-Source breakdown voltage Gate threshold voltage Drain-Source ON-resistance Forward transadmittance Diode forward voltage Input capacitance Output capacitance Feedback capacitance Turn-on time (delay time) Rise time Fall time Turn-off time (delay time) Channel-Case heat resistance Channel-Atmosphere heat resistance Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Ciss Coss Crss td(on) tr tf td(off) Rth(ch-c) Rth(ch-a) Condition VDS= 600V, VGS= 0 VGS= ±30V, VDS= 0 ID=1m.


2015-10-22 : D788    NTR4170N    2SK2210    C2958    AD6677    GFT035EA320240Y    CPC1303    CPC1303    NTR4171P    NTA4153N   


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