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2SK2334(L), 2SK2334(S)
Silicon N-Channel MOS FET
November 1996 Application
High speed power switch...
www.DataSheet4U.com
2SK2334(L), 2SK2334(S)
Silicon N-Channel MOS FET
November 1996 Application
High speed power switching
Features
Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche Ratings
Outline
DPAK-2 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S
2
3
2 3
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2SK2334(L), 2SK2334(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW≤10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID(pulse)* IDR IAP*
3 1
Ratings 60 ±20 20 80 20 20
Unit V V A A A A mJ W °C °C
EAR* Tch
3
34
2
Pch*
30 150 –55 to +150
Tstg
2
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2SK2334(L), 2SK2334(S)
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown
voltage Gate to source breakdown
voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS IGSS VGS(off) Min 60 ±20 — — 1.0 — — Forward transfer admittance Input capacitance |yfs| Ciss 9 — Typ — — — — — 0.04 0.055 15 980 Max — — ±10 100 2.25 0.055 0.07 — — Unit V V µA µA V Ω Ω S pF Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 10 A 1 VGS = 10 V* ...