2SK2390

www.DataSheet4U.com 2SK2390 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche ratings Outline TO-220CFM D G 12 3 1. Gate 2. Drain 3. Source S www.DataSheet4U.com 2SK2390 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID(pulse)* IDR IAP* 3 1 Ratings 60 ±20 12 48 12 12 Unit V V A A A A mJ W °C °C EAR* Tch 3 12 2 Pch* 20 150 –55 to +150 Tstg 2 www.DataSheet4U.com 2SK2390 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS IGSS VGS(off) Min 60 ±20 — — 1.0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 4 — — — — — — — — — Typ — — — — — 0.075 0.11 8 450 240 60 ...