2SK2552

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK2552 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK2552 is suitable for converter of ECM. FEATURES Compact package High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA) Includes diode and high resistance at G - S ORDERING INFORMATION PART NUMBER 2SK2552 PACKAGE SC-75 (USM) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Note1 VDSX 20 Gate to Drain Voltage VGDO –20 Drain Current ID 10 Gate Current Total Power Dissipation Note2 IG 10 PT 200 Junction Temperature Tj 125 Storage Temperature Tstg –55 to +125 V V mA mA mW °C °C 1.6 ± 0.1 0.8 ± 0.1 PACKAGE DRAWING (Unit: mm) 0.3 +0.1 –0 0.15 +0.1 –0.05 3 2 0.2 +0.1 –0 1 0.5 0.5 1.0 1.6 ± 0.1 0 to 0.1 0.6 0.75 ± 0.05 1: Source 2: Drain 3: Gate EQUIVALENT CIRCUIT Gate Drain Source Notes 1. VGS = –1.0 V 2. Mounted on ceramic substrate of 3.0 cm2 x 0.64 mm Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D15941EJ2V0DS00 (2nd edition) Date Published November 2004 NS CP(K) Pr...