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2SK260

N-Channel MOSFET Transistor

Description

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO...

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