www.datasheet4u.com
2SK2644-01
Features
High speed switching Low on-resistance No secondary breakdown Low driving power...
www.datasheet4u.com
2SK2644-01
Features
High speed switching Low on-resistance No secondary breakdown Low driving power High
voltage VGS=±35V Guarantee Avalanche-proof
FUJI POWER
MOSFET
N-CHANNEL SILICON POWER
MOSFET
FAP-IIS SERIES
Outline Drawings
TO-3P
Applications
Switching regulators UPS DC-DC converters General purpose power amplifier
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Drain-source
voltage Continuous drain current Pulsed drain current Gate-source peak
voltage Repetitive or non-repetitive Maximum avalanche energy Maximum power dissipation Operating and storage temperature range Symbol V DS ID ID[puls] VGS IAV EAV PD Tch Tstg Rating 500 ±18 ±72 ±35 18 518.5 125 +150 -55 to +150 Unit V A A V A mJ W °C °C Remarks
Drain(D)
Equivalent circuit schematic
Gate(G)
Rch < =150°C
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown
voltage Gate threshold
voltage Zero gate
voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Avalanche capability Diode forward on-
voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=500V VGS=0V VGS=±35V VDS=0V ID=9A VGS=10V ID=9A VDS=2...
