2SK2727

2SK2727 Silicon N Channel MOS FET High Speed Power Switching ADE-208-526 A 2nd. Edition Features Low on-resistance High speed switching Low drive current Avalanche ratings Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2727 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings 500 ±30 10 40 10 10 5.55 100 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR* Pch* Tch Tstg 2 2SK2727 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 500 ±30 — — 2.5 — 4.2 — — — — — — — — — — — — Typ — — — — — 0.75 7.0 1100 330 65 21 5 8 20 70 55 50 1.0 300 Max — — ±10 10 3.5 0.95 — — — — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF nc nc nc ns ns ns ns V ns I D = 10A, VGS = 0 I F = 10A, VGS = 0 diF/ dt = 100A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±25V, VDS = 0 VDS = 500 V, VGS = 0 I D = 1mA, VDS = 10V*1 I D = 5A, VGS = 10V*1 I D = 5A, VDS = 10V*1 VDS = 10V VGS = 0 f = 1MHz VDD = 400V VGS = 10V I D = 10A VGS = 10V, ID...