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2SK2729 Datasheet

Part Number 2SK2729
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Datasheet 2SK2729 Datasheet2SK2729 Datasheet (PDF)

2SK2729 Silicon N Channel MOS FET High Speed Power Switching ADE-208-455 A 2nd. Edition Features • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2729 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature St.

  2SK2729   2SK2729






Part Number 2SK2729
Manufacturers Renesas
Logo Renesas
Description Silicon N-Channel MOSFET
Datasheet 2SK2729 Datasheet2SK2729 Datasheet (PDF)

2SK2729 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings REJ03G1027-0300 (Previous: ADE-208-455A) Rev.3.00 Sep 07, 2005 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G 2. Drain (Flange) 3. Source 1 2 S 3 Rev.3.00 Sep 07, 2005 page 1 of 7 2SK2729 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body.

  2SK2729   2SK2729







Silicon N-Channel MOSFET

2SK2729 Silicon N Channel MOS FET High Speed Power Switching ADE-208-455 A 2nd. Edition Features • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2729 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings 500 ±30 20 80 20 20 22 150 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR* Pch* Tch Tstg 2 2SK2729 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Symbol V(BR)DSS V(BR)GSS I GSS I DSS Min 500 ±30 — — 2.5 — 9 — — — — — — — — — — — — Typ — — — — — 0.24 15 3300 900 120 55 14 17 45 140 150 85 1.0 400 Max — — ±10 10 3.5 0.29 — — — — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF nc nc nc ns ns ns ns V ns I D = 20A, VGS = 0 I F = 20A, VGS = 0 diF/ dt = 100A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±25V, VDS = 0 VDS = 500 V, VGS = 0 I D = 1mA, VDS = 10V*1 I D = 10A, VGS = 10V*1 I D = 10A, VDS = 10V*1 VDS = 10V VGS = 0 f = 1MHz VDD = 400V VGS = 10V I D = 20A VGS = 10V, .


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