2SK2850

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·UPS ·DC-DC converters ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 6 A ID(puls) Pulsed drain current 24 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range ·THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 35 ℃/W 2SK2850 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(th) Gate Threshold Voltage VDS=10V; ID=1mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 3A IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 900V; VGS= 0 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS=25V; VGS=0V; fT=1MHz tr Rise Time ton Turn-on Time tf Fall Time toff Turn-off Time VGS=10V; ID=6A; VDD=600V; RL=10Ω ...