2SK2864

Ordering number : ENN6610 2SK2864 N-Channel Silicon MOSFET 2SK2864 Ultrahigh-Speed Switching Applications Features Package Dimensions 0.4 0.2 Low ON-resistance. unit : mm Ultrahigh-speed switching. 2128 Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package. [2SK2864] 8.2 7.8 6.2 3 8.4 10.0 0.6 4.2 1.2 1.0 2.54 1 2 1.0 2.54 6.2 5.2 0.3 0.6 7.8 5.08 10.0 6.0 2.5 0.7 1 : Gate 2 : Source 3 : Drain SANYO : ZP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings Unit 200 ±20 20 80 50 150 V V A A W °C °C --55 to +150 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) yfs RDS(on) Conditions ID=1mA, VGS=0 IG=±100µA, VDS=0 VDS=200V, VGS=0 VGS=± 16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=10A ID=10A, VGS=10V Ratings min 200 ±20 100 ± 10 2.0 6 10 90 120 4.0 typ max Unit V V µA µA V S mΩ Continued on next page. Any and all SANYO products described or contained herein do not have specifications...