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2SK2869(L), 2SK2869(S)
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1037-0200 (Previo...
www.DataSheet4U.com
2SK2869(L), 2SK2869(S)
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1037-0200 (Previous: ADE-208-570) Rev.2.00 Sep 07, 2005
Features
Low on-resistance RDS = 0.033 Ω typ. High speed switching 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2))
4
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S))
4 G 1 2 3 D 1. Gate 2. Drain 3. Source 4. Drain
1
2 3
S
Rev.2.00 Sep 07, 2005 page 1 of 8
2SK2869(L), 2SK2869(S)
Absolute Maximum Ratings
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(Ta = 25°C)
Symbol VDSS VGSS ID ID(pulse)*1 IDR IAP*3 EAR*3 Pch*2 Tch Tstg Ratings 60 ±20 20 80 20 20 34 30 150 –55 to +150 Unit V V A A A A mJ W °C °C
Item Drain to source
voltage Gate to source
voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown
voltage Gate to source breakdown
voltage Gate to source leak current Zero gate
voltage drain current Gate to source cutoff
voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward
voltage Body to drai...